Mosfet K10a60d

Type Designator: TK10A60D

Marking Code: K10A60D

PRUEBAS DEL TRANSISTOR MOSFET ESTATICAS DINAMICAS, ESTE TRANSISTOR ES MUY UTILIZADO EN LAS FUENTES CONMUTADAS ya estamos dando clases de electronica por in. TK10A60D MOSFET. Type Designator: TK10A60D Marking Code: K10A60D Type of Transistor: MOSFET Type of Control Channel: N -Channel. Buy Laliva 10PCS/LOT K10A60D K10A60 10A60D 10A60 TO220F MOSFET: MOSFET - FREE DELIVERY possible on eligible purchases, on all orders free shipping Online sales cheap of experts Promote Sale price Fashion products High quality live low-cost online mall! K10A60D, produced by Toshiba Semiconductor and Storage, is a N-Channel MOSFET transistor in TO-220SIS Through Hole package. The features include 600V drain-source breakdown voltage, 10A (Ta) continuous drain current at 25°C,4V @ 1mA gate-source threshold voltage. K10A60D is used in the 150°C (TJ) operating temperature range. K10A60W Datasheet - Vdss=600V, N Channel MOSFET - Toshiba, TK10A60W datasheet, K10A60W pdf, K10A60W pinout, K10A60W manual, K10A60W schematic, K10A60W data.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Mosfet K10a60d Datasheet

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 135 pF

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO220SIS

TK10A60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TK10A60D Datasheet (PDF)

0.1. tk10a60d5.pdf Size:245K _toshiba

TK10A60D5MOSFETs Silicon N-Channel MOS (-MOS)TK10A60D5TK10A60D5TK10A60D5TK10A60D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)(3) High f

0.2. tk10a60d.pdf Size:186K _toshiba

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK10A60D Unit: mmSwitching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A

0.3. tk10a60d5.pdf Size:252K _inchange_semiconductor

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60D5ITK10A60D5FEATURESLow drain-source on-resistance:RDS(on) = 0.8 (typ.)Enhancement mode:Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

0.4. tk10a60d.pdf Size:253K _inchange_semiconductor

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60DITK10A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.58 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

Datasheet: TJ60S06M3L, TJ70A06J3, TJ80S04M3L, TJ8S06M3L, TK100F04K3, TK100F06K3, TK10A50D, TK10A55D, BUK455-200A, TK10S04K3L, TK10X40D, TK11A45D, TK11A50D, TK11A55D, TK11A60D, TK11A65D, TK12A10K3.

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Mosfet Transistor K10a60d